product summary part number bv dss r ds(on) i d iRFM260 200v 0.060 w 35a* features: n hermetically sealed n electrically isolated n simple drive requirements n ease of paralleling n ceramic eyelet absolute maximum ratings parameter iRFM260 units i d @ v gs = 10v, t c = 25c continuous drain current 35* i d @ v gs = 10v, t c = 100c continuous drain current 28 i dm pulsed drain current ? 180 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/k ? v gs gate-to-source v oltage 20 v e as single pulse avalanche energy ? 700 mj i ar avalanche current ? 35 a e ar repetitive avalanche energy ? 25 mj dv/dt peak diode recovery dv/dt ? 4.3 v/ns t j operating junction -55 to 150 t stg stor age t emperature range lead t emperature 300(0.063 in.(1.6mm) from case for 10s) weight 9.3 (typical) g n-channel provisional data sheet no. pd-9.1388a pre-radiation 200volt, 0.060 w w w w w , hexfet hexfet technology is the key to international rectifiers advanced line of power mosfet tran- sistors. the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-es- tablished advantages of mosfets, such as volt- age control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is re- quired. hexfet tr ansistors totally isolated package elimi- nates the need for additional isolating material be- tween the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a repetitive avalanche and dv/dt rated iRFM260 hexfet ? transistor
iRFM260 electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs =0 v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.24 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.060 v gs = 10v, i d = 28a on-state resistance 0.068 w v gs = 10v, i d = 35a v gs(th) gate threshold v oltage 2.0 4.0 v v ds = v gs , i d = 250a g fs forward tr ansconductance 22 s ( )v ds > 15v, i ds = 28a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20 v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 230 v gs = 10v, i d = 35a q gs gate-to-source charge 40 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 110 t d (on) turn-on delay time 29 v dd = 100v, i d = 35a, t r rise time 120 r g = 2.35 w t d (off) turn-off delay time 110 t f fall time 92 l d internal drain inductance 8.7 l s internal source inductance 8.7 c iss input capacitance 5100 v gs = 0v, v ds = 25 v c oss output capacitance 1100 pf f = 1.0mhz c rss reverse tr ansfer capacitance 280 source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 35* i sm pulse source current (body diode) ? 180 v sd diode forw ard v oltage 1.8 v t j = 25c, i s = 35a, v gs = 0v ? t rr reverse recovery time 420 ns t j = 25c, i f = 35a, di/dt 100a/ m s q rr reverse recovery charge 4.9 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a modified mosfet symbol showing the integral reverse p-n junction rectifier. thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.50 r thcs case-to-sink 0.21 k/w ? mounting surface flat, smooth, and greased r thja junction-to-ambient 48 typical socket mount na w ? nh ns measured from drain lead, 6mm (0.25 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet symbol show- ing the internal inductances. m a
iRFM260 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, t j = 150 o c fig 1. typical output characteristics, t j = 25 o c fig 3. typical transfer characteristics 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain -to -s ource o n re sistan ce ds(on) (norm alized) v = 10 v gs a i = 46 a d 1 10 100 1000 0.1 1 10 100 i , d rain-to-source c urrent (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s pulse width t = 2 5c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-s ource current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s pulse w idth t = 150c a 4.5v j 1 10 100 1000 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-s ourc e c urre nt (a ) v = 5 0 v 20s pulse w idth ds a
iRFM260 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2000 4000 6000 8000 10000 12000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v , f = 1m h z c = c + c , c s h o r t e d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 4 8 12 16 20 0 50 100 150 200 250 q , total g ate charge (nc) g v , g ate-to -sou rce v oltage (v ) gs a for test circuit see figure 13 i = 35 a v = 16 0v v = 10 0v v = 40 v d ds ds ds 1 10 100 1000 1 10 100 1000 v , drain-to-source voltage (v) ds i , dra in current (a ) ope ratio n in this a re a limite d by r d ds(on) t = 25 c t = 15 0c single pulse c j 10s 100s 1ms 10ms a 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 t = 25c t = 150c j j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain cu rren t (a) sd sd a
iRFM260 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin g le p u lse (thermal response) a thermal response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 12 j dm th j c c fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 0 10 20 30 40 50 25 50 75 100 125 150 c i , drain c urrent (am ps) d t , c ase temperature (c) a limited by package
iRFM260 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15 v 20v 0 400 800 1200 1600 25 50 75 100 125 150 j e , s ingle pulse avalanche e nergy (m j) as a starting t , junction temperature (c) i to p 16 a 2 2a bottom 35a d
iRFM260 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
iRFM260 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 7/96 case outline and dimensions ? to-254aa 3.78 ( .149 ) 3.53 ( .139 ) -a - 13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) 20.32 ( .800 ) 20.07 ( .790 ) 13.84 ( .545 ) 13.59 ( .535 ) -c - 1 . 14 ( . 0 45 ) 0 . 89 ( . 0 35 ) 3.81 ( .150 ) 1.27 ( .050 ) 1.02 ( .040 ) -b- .12 ( .005 ) 3x 2x 3 . 81 ( . 1 50 ) 1 2 3 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) notes: 1. dimensioning & tolerancing per ansi y14.5m, 1982. 2. all dim ensions a re s how n in millimeters ( inche s ). .50 ( .020 ) m c a m b .25 ( .010 ) m c legend 1 - collector 2 - emitter 3 - gate w 3 . 78 ( . 1 49 ) 3 . 53 ( . 1 39 ) -a- 13.84 ( .545 ) 13.59 ( .535 ) 20.32 ( .800 ) 20.07 ( .790 ) -c - 21.98 ( .865 ) 20.95 ( .825 ) 3.81 ( .150 ) 2x 1 . 14 ( . 0 45 ) 0 . 89 ( . 0 35 ) 3x 1 7 . 40 ( . 6 85 ) 1 6 . 89 ( . 6 65 ) 6.60 ( .260 ) 6.32 ( .249 ) 1 . 27 ( . 0 50 ) 1 . 02 ( . 0 40 ) 13.84 ( .545 ) 13.59 ( .535 ) 1.52 ( .060 ) r m in. 4.83 ( .190 ) 3.81 ( .150 ) 4.01 ( .158 ) 3.61 ( .142 ) .12 ( .005 ) -b - 3.2 3.1 .50 ( .020 ) m c a m b .25 ( .010 ) m c 1 2 3 n ote s : 1. dimensioning & tolerancing per ansi y14.5m-1982. 2. al l d im en sions ar e sh ow n in mil limete r s ( in c he s ). 3. le adform is a va ilable in e ither orienta tion : 3.1 exam pl e : ir fm4 50 0 3.2 exam pl e : ir fm4 50 u legend 1 - collector 2 - em itte r 3 - gate conforms to jedec outline to-254aa dimensions in millimeters and ( inches ) ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? pulse width 300 m s; duty cycle 2% ? i sd 35a, di/dt 130 a/ m s, v dd bv dss , t j 150c suggested r g = 2.35 w ? @ v dd = 50 v, starting t j = 25c, e as = [0.5 * l * (i l 2 ) ] peak i l = 35a, v gs =10 v, 25 r g 200 w ? k/w = c/w * i d current limited by pin diamete ( die current = 46a ) notes: caution beryllia w arning per mil-prf-19500 packages containing beryllia shall not be ground, sand- blasted, machined, or have other operations perfomed on them which will produce beryllia or beryllium dust. fur- thermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
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